1996. 11. 16 1/2 semiconductor technical data KDV147 revision no : 1 fm radio band tuning application. features low r s : r s =0.3 u (typ.). small package. maximum ratings (ta=25 1 ) 1 2 3 to-92m dim millimeters a b c d e f g h j k 1. anode 1 3. anode 2 2. cathode 1, 2 3.20 max 4.30 max 0.55 max 2.40 0.15 1.27 2.30 14.00 0.50 0.60 max 1.05 1.45 25 0.55 max l m n f a g j k d ee l n m c h 0.80 o 0.75 o b + _ + _ 12 3 electrical characteristics (ta=25 1 ) variable capacitance diode silicon epitaxial planar diode classipication of capacitance grade characteristic symbol rating unit reverse voltage v r 15 v junction temperature t j 150 1 storage temperature range t stg -55 150 1 characteristic symbol test condition min. typ. max. unit reverse voltage v r i r =10 a 15 - - v reverse current i r v r =15v - - 50 na capacitance c 2v v r =2v, f=1mhz 34.0 - 39.5 pf c 8v v r =8v, f=1mhz 11.7 - 13.7 capacitance ratio c 2v /c 8v 2.7 2.95 3.2 series resistance r s c=30pf, f=50mhz - 0.3 0.5 u grade capacitance (c 2v ) unit a 34.0 35.5 pf b 35.0 36.5 c 36.0 37.5 d 37.0 38.5 e 38.0 39.5 note : r s test circuit hi a1 a2 q meter h.p model 4342a lo k r v 100k ? 1000pf c is a1 - a2 capacitance.
1996. 11. 16 2/2 KDV147 revision no : 1 variation of capacitance -3 -50 ambient temperature ta ( c) c(temp.)/c(25 c) - ta normalized tuning frequency f/f(max) 0.5 0 reverse voltage v (v) r r max f/f - v 10 reverse current i (pa) 0 r 0 reverse voltage v (v) r i - v c - v r reverse voltage v (v) 0 capacitance c (pf) 10 figure of merit q 100 0 reverse voltage v (v) r q - v r 246810 30 50 70 100 f=1mhz ta=25 c rr 4 8 12 16 100 1k ta=60 c ta=25 c r 246810 300 500 1k 2k f=50mhz ta=25 c 4681012 0.6 0.7 0.8 0.9 1.0 c=10p f c= 5pf c= 0 l c r v r i d c(temp.)/c(25 c) (%) -25 0 25 50 75 100 125 -2 -1 0 1 2 3 f=1mhz v = 2v r r v =5v r v =8v
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